750 V, 9 mohm SiC FET: UJ4SC075009B7S
Source: Qorvo
The UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET based on a unique cascode circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to make a normally-off SiC FET device.
The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Key Features
- On-resistance (RDS(on)): 9 mohm (typ)
- Maximum operating temperature: 175 °C
- Excellent reverse recovery: Qrr = 338 nC
- Low body diode VFSD: 1.1 V
- Low gate charge: QG = 75 nC
- Threshold voltage VG(th): 4.5 V (typ) allowing 0 to 15 V drive
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