Application Note

Bias and RF Sequencing For GaN And LDMOS RF Power Devices

Source: Wolfspeed, A Cree Company
Wolfspeed - Bias and RF Sequencing For GaN And LDMOS RF Power Devices

Wolfspeed supplies LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) and GaN (Gallium Nitride) RF Power Amplifier solutions for a variety of applications ranging from aerospace and defense to cellular infrastructure.

GaN HEMT (High-Electron-Mobility Transistor) and LDMOS MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) are voltage controlled field-effect transistors requiring specific bias sequencing to ensure safe operation under the conditions specified within a datasheet. Download the application note for more information.

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