12 W Discrete Power Transistor: TGF2953 Datasheet

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation. Download the datasheet for more specifications.