Datasheet | September 1, 2015

2x120W, 36V, DC-3.5 GHz Power Transistor: T1G4020036-FL Datasheet

Source: Qorvo

The T1G4020036-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics. Download the datasheet for more specifications.

access the Datasheet!

Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to RF Globalnet

Please tell us more about you so that we can customize our newsletters to your specific interests:

Qorvo