10W, 32V, DC-6 GHz Power Transistor: T1G6001032-SM Datasheet
Source: Qorvo
The T1G6001032-SM is a 10W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation. Download the datasheet for more specifications.
access the Datasheet!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet
This website uses cookies to ensure you get the best experience on our website. Learn more