RF Power Transistor

Ericsson49 RF power transistor is intended for use in applications in the 920-960 MHz band. Features include an output power of 70 W , a gain of 16 dB, and the device exhibits a linearity of ±0.25 dB over the 920-960 MHz band. Efficiency is 50%, resulting in a reduced power consumption figure. The part operates from a standard 28 V supply and has a minimum drain-source breakdown voltage of 65 V. Exhibiting versatility, the n-channel enhancement mode FET has a load mismatch tolerance of 5:1. Class AB two-tone third order intermodular distortion (IMD3) is –39 dBc at 20 W PEP (Peak Envelope Power). Ericsson49 uses total gold metallization, ion implantation and surface passivation to ensure lifetime, reliability and thermal stability. 100% lot traceability is standard to conform to quality assurance programs.

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