RF Power Transistors for Aerospace and Defense
Source: NXP Semiconductors
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz 1090 MHz range.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances, designed for broadband operation (1030 MHz to 1090 MHz). It has easy power control, excellent ruggedness, excellent thermal stability, high efficiency, high flexibility with respect to pulse formats, Integrated ESD protection and Internally matched for ease of use.
BLA6H1011-600, RF Power Transistor
Running from a 50V supply voltage, the BLA6H1011-600 is a LDMOS power transistor which delivers 600W output power for pulsed RF signals, 52% efficiency and 17dB gain across the band. The transistor is intended for avionics transmitter applications in the 1030 MHz to 1090 MHz range such as TCAS (travel collision avoidance system) and IFF (identification friend/foe). This final stage transistor should be accompanied by NXP's BLL6H0514-25 driver in a power amplifier line-up.
- 1030-1090 MHz designed for broadband operation
- 17 dB gain
- 52 % Efficiency
- 600 W output power
- Excellent ruggedness – overdrive without risk to 5 dB
- Very consistent performance – no tuning required
- Excellent thermal stability
- Internally matched for ease of use
- Non-toxic packaging and ROHS compliance (i.e. free of BeO)
•Datasheet: BLA6H1011-600, RF Power Transistor
•NXP RF Manual
•Video: NXP's RF Power Transistors for Broadcast, ISM and Defense and Aerospace Applications
BLL6H0514-25 RF Power Transistor (to accompany the BLA6H1011-600)The BLL6H0514-25 is a 25W LDMOS power transistor for avionics L-band applications at frequencies from 0.5GHz to 1.4GHz. The transistor is unmatched and features high power gain of 21dB and an efficiency of 58%. The transistor is specifically designed to act as broad band driver for a final stage in avionics and L-band radar applications.
- 0.5 GHz to 1.4GHz designed for broadband operation
- 21 dB gain
- 58 % Efficiency
- Excellent ruggedness – overdrive without risk to 5 dB
- Very consistent performance – no tuning required
- Excellent thermal stability
- Non-toxic packaging and ROHS compliance (i.e. free of BeO)
•Datasheet: BLL6H0514-25 RF Power Transistor
•NXP RF Manual
•Video: NXP's RF Power Transistors for Broadcast, ISM and Defense and Aerospace Applications
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