Richardson RFPD Announces In-Stock Availability Of New 18 W, X-Band High Power Amplifier From UMS

Versatile CHA8612-QDB GaN on SiC MMIC in QFN package

Richardson RFPD, Inc., an Arrow Electronics company, announced today the in-stock availability and full design support capabilities for a new gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors.

The CHA8612-QDB is a two-stage high power amplifier operating between 7.9 and 11 GHz. It provides 18 W (typical) of saturated output power and 40% power added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is versatile for a wide range of applications, from military to commercial radar and communication systems.

Additional key features of the CHA8612-QDB include:

• Linear gain: 26 dB
• DC bias: Vd=30 V @ IDQ=680 mA
• MSL 3
• 46-lead, 7x7 mm QFN package

To find more information, or to purchase this product today online, visit the CHA8612-QDB webpage. The device is also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from United Monolithic Semiconductors, visit the UMS storefront webpage.

About Richardson RFPD
Richardson RFPD, an Arrow Electronics company, is a global leader in the RF, wireless, IoT and power technologies markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production. More information is available online at richardsonrfpd.com.