transistors-products

61. GaN Wideband Transistor: MAGX-011086 4/20/2015

    The MAGX-011086 is a wideband transistor optimized for operations in DC - 6 GHz. This GaN HEMT is made with operating output power levels of 4W (36 dBm) in an industry standard, low inductance, and a surface mount QFN package.

62. 0405-500L: UHF Transistor For Long Pulsed Radar Applications 12/3/2007
    The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz
63. 1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L 7/13/2023

    The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

64. DME800 Avionics Transistor 8/12/2005
    APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
65. 960-1215 MHz 500W Avionics TACAN Transistor 8/19/2005
    The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.
66. RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM 9/5/2012

    This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.

67. GaN RF Input-Matched Transistor: QPD1025L 11/3/2022

    The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

68. RF Power Transistors: S-Band 7/28/2011
    Microsemi has leveraged its industry-leading expertise in S-band RF power transistors to create a family of GaN-on-SiC solutions that are tailored to support the requirements of next-generation systems requiring higher power, better efficiency, and wider bandwidth than is possible using conventional silicon or SiC process technologies. For applications operating in frequency bands up to 20GHz, the wide bandgap material properties of GaN-on-SiC technology enable smaller systems with improved voltage, gain, broadband performance, drain efficiency, and long-term reliability.
69. GaN S-Band 50Ω Transistor: IGT2731M130 4/11/2018

    Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.

70. 450MHz 500W UHF Radar Transistor 7/7/2005
    The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters...