transistors-products

51. 1200W GaN L-Band Avionics Transistor: Highest Power In The Industry 4/11/2016

    Integra Technologies introduces IGN1011L1200 on GaN/SiC, exhibiting 17dB gain and 75% efficiency at 1030-1090 MHz, 50V, for IFF at ELM Mode S pulse conditions. Devices are 100% tested.

52. HF50-Series Bipolar Power Transistors 1/20/2009
    Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 50 volt products offer drop-in equivalence to other manufacturers.
53. 125-167 MHz 650W VHF Band Transistor 7/7/2005
    The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...
54. 1011LD300 LDMOS Avionics Transistor 8/12/2005
    APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...
55. GaN RF Power Transistor: T1G6003028-FS 10/24/2012

    This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

56. RF Transistor 12/28/1998
    Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
57. DC – 4 GHz GaN RF Transistors: QPD1009 And QPD1010 4/28/2016

    The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

58. 1,500 Watt RF Power Transistor For UHF Pulsed Radar 3/17/2010
    Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.
59. 800-1000 MHz 12W P-Band Radar Transistor 3/2/2001
    The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
60. 1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L 6/29/2018

    Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.