UHF-Band RF Power MOSFET Transistor
Source: Integra Technologies, Inc.
This high power transistor part number IDM500CW200 is designed for
VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW
conditions, this dual MOSFET device supplies a minimum of 200
watts of power across the instantaneous operating bandwidth of 1 to 500
MHz
Click Here To Download:
•Datasheet: UHF-Band RF Power MOSFET Transistor
This high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1 to 500 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning. Click Here To Download:
•Datasheet: UHF-Band RF Power MOSFET Transistor
•Datasheet: UHF-Band RF Power MOSFET Transistor
This high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1 to 500 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning. Click Here To Download:
•Datasheet: UHF-Band RF Power MOSFET Transistor
This website uses cookies to ensure you get the best experience on our website. Learn more