W-Band Low Noise Amplifiers
Source: Northrop Grumman Microelectronic Products & Services
Northrop Grumman Microelectronics Products & Services’ latest entry in their series of W-band products include two new InP HEMT low noise amplifiers covering the 71-96 and 80-100 GHz frequency ranges. Both amplifiers are ideal for applications involving W-band imaging, sensors, radar, and short haul/high capacity links.
Individual model specifications include:
ALP283 LNA:
- RF frequency: 80-100 GHz
- Broadband Operation
- Linear gain: 29 dB, typical
- Noise Figure: 2.5 dB, typical
- Average NF (80-100 GHz): 2.1 dB, typical
- 0.1 um InP HEMT process
- P1dB : 3 dBm (Est.)
- Microstrip Topology MMIC, In-line Input & Output
- 3 mil substrate
- DC Power: < 35 mW
- Die Size 1.7 sq. mm
ALP275 LNA:
- RF frequency: 71-96 GHz
- Broadband Operation
- Linear gain: >= 26 dB, typical
- Noise Figure: 3 dB, typical
- P1dB : 4 dBm *
- Microstrip Topology MMIC, In-line Input & Output
- 0.1 um InP HEMT Process
- 3 mil substrate
- DC Power: 30 mW
- Die Size 2.125 sq. mm
For more information on these low noise amplifiers, download the individual model datasheets. You can also contact Northrop Grumman Microelectronics Products & Services directly to discuss your application or to request a quote.
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