50 V GaN RF Transistors: QPD1008 Datasheet

The QDP1008 is a discrete GaN on SiC HEMT operating from the DC to 3.2 GHz frequency range. It is a 50 V device with an output power level of 162 W at 2 GHz, and a linear gain of 17 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications. For more specifications, features, and parameters for the QPD1008, download the datasheet.