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750 V, 58 mohm SiC FET: UJ4C075060L8S

Source: Qorvo
Qorvo - SiC Fet

The UJ4C075060L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

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The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Key Features

  • On Resistance RDS(on): 58 mohm (typ)
  • Operating temperature: 175C (max)
  • Excellent reverse recovery: Qrr = 70nC
  • Low body diode VFSD: 1.31V
  • Low gate charge: QG = 37.8nC
  • Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
  • Low intrinsic capacitance
  • ESD protected: HBM class 2 and CDM class C3
  • TOLL package for faster switching, clean gate waveforms

Typical Applications

  • Server and Telecom power supplies
  • Switch mode power supplies
  • DC-DC converter circuits
  • EV Charging
  • PV Inverters

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