35 W, 2.0 – 6.0 GHz GaN MMIC Power Amplifier: CMPA2060035F
The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
The CMPA2060035F offers greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. The MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink.
For additional features and specifications on the CMPA2060035F power amplifier, download the available datasheet.