XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
Mimix Broadband's three stage 11.0-16.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.5 dBm. This
MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity
Mimix Broadband's three stage 11.0-16.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of 38.5 dBm. This
MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Features
- Excellent Linear Output Amplifier Stage
- 31.0 dB Small Signal Gain
- 30.0 dBm P1dB Compression Point
- 38.5 dBm Third Order Intercept (OIP3)
- 100% On-Wafer RF, DC and Output Power Testing
- 100% Visual Inspection to MIL-STD-883 Method 2010
Click here to download the product datasheet in pdf format.
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