Featured Solutions

  1. gMOT - Compact Grating Magneto-Optical Trap 3/21/2024

    The gMOT device is a compact, portable grating magneto-optical trap capable of trapping 6 million alkali-metal atoms with temperatures below 10 microkelvin demonstrated.

  2. 0.7 - 6.0 GHz, 15 Watt Typ Solid State High Power Amplifier: AMP1002BLW 3/21/2024

    The AMP1002BLW is a solid-state high-power amplifier with a Class AB linear GaN design, offering instantaneous wide bandwidth suitable for various modulation standards.

  3. 2.0 - 8.0 GHz, 250 W Min / 300 W Typ Solid State High Power Amplifier: AMP2085E-1LC 3/21/2024

    The AMP2085E-1LC is a compact, rack-mounted solid-state high-power amplifier tailored for diverse applications including EMI/RFI, lab work, and communications.

  4. Double Balanced Mixer/LO Amplifier: MM1A-1040HPSM-2 3/19/2024

    The MM1A-1040HPSM-2 is a versatile, robust, and broadband double balanced mixer with an integrated broadband LO driver amplifier. 

  5. 750 V, 58 mohm SiC FET: UJ4C075060L8S 3/15/2024

    The UJ4C075060L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

  6. 750 V, 44 mohm SiC FET: UJ4C075044L8S 3/15/2024

    The UJ4C075044L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

  7. 750 V, 33 mohm SiC FET: UJ4C075033L8S 3/14/2024

    The UJ4C075033L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

  8. 750 V, 23 mohm SiC FET: UJ4C075023L8S 3/14/2024

    The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

  9. 1.0 - 6.0 GHz 35 Watt GaN Power Amplifier: QPM0106 3/14/2024

    The QPM0106 is a packaged, high-power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process that operates from 1.0 - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power.

  10. 5 - 1218 MHz, 75 Ohm, 25 dB CATV Amplifier: QPL7425 3/14/2024

    The QPL7425 is a GaAs pHEMT single-ended RF amplifier IC featuring 25 dB of flat gain and low noise designed to support HFC and Fiber to The Home (FTTH) applications from 5 to 1218 MHz.