transistors-products

11. GaN S-Band 50Ω Transistor: IGT2731L120 7/27/2016

    Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

12. 3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC 9/17/2018

    Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.

13. RF Power Transistor: QPD0020 2/28/2022

    The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

14. High L-Band Series Transistors 1/30/2006
    The High L-Band series transistors from Advanced Power Technology consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively...
15. 380 W, 1210-1400 MHz GaN/SiC Transistor: IGN1214M380C 12/2/2016

    Integra Technologies introduces the IGN1214M380C GaN/SiC transistor, exhibiting 20 dB gain, 54% efficiency at 150 us-10% pulse conditions, and operation in the 1210-1400 MHz frequency range. These devices are 100% tested for large signal parameters.

16. UHF-Band RF Power MOSFET Transistor 2/6/2007
    This high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1 to 500 MHz
17. VRF152 -- RF Power Vertical MOSFET Transistor 6/25/2009
    The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
18. DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022 6/6/2017

    The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

19. 0405-500L: UHF Transistor For Long Pulsed Radar Applications 12/3/2007
    The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz
20. Power Transistors And Modules For S-Band Radar 12/16/2008
    Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.