transistors-products

31. 10500 Avionics Transistor 8/12/2005
    APT RF’s Avionics Transistor, 500W, Class C, common base power transistor is designed for Mode-S systems covering 1030-1090 MHz...
32. CW VDMOS Transistors 6/15/2007
    Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now
33. High Power 1214-370M Transistor 9/26/2005
    This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
34. GaN RF Power Transistor: T1G6003028-FS 10/24/2012

    This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

35. TPR700 Avionics Transistor 9/29/2005
    Avionics Transistor, 350W, Class C, common base power transistor is designed for transponder avionics applications at 1090 MHz with 10uS, 1% pulsing at Vcc = 50V
36. 5200 - 5900 MHz GaN MMIC For Radar Power Amplifiers: CMPA5259050F 12/3/2018

    The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.

37. 1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025 2/13/2018

    Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

38. GaN on Sic HEMT Transistor 1/25/2013

    These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.

39. DME800 Avionics Transistor 8/12/2005
    APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
40. 960-1215 MHz 500W Avionics TACAN Transistor 8/19/2005
    The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.